INDEX
absorption coefficient 32, 33, 66, 360, 397
absorption edge 32, 156, 272, 377, 397
absorption length 372, 397, 415, 421
acceptor 15, 31, 81, 157, 180, 182, 296
density 70, 84
energy 181, 298
acoustic scattering see “scattering”
activation energy 31, 453, 454, 455, 458, 463, 467, 470
Adams, Alf 318, 358
Adler, David 467
Aharonov-Bohm effect 231, 233
Akasaki, Isamu 310, 312, 314, 325
Alferov, Zhores 3, 192, 265, 482
aluminium 8, 15, 26, 89, 101, 112, 113, 135, 165
aluminium gallium arsenide (AlGaAs) 191, 193, 201, 289, 291, 423, 435
aluminium gallium arsenide antimonide (AlGaAsSb) 252, 345, 441, 442
aluminium gallium indium phosphide (AlGaInP) 292, 293, 302, 317, 319, 321
aluminium gallium nitride (AlGaN) 252, 253, 256
aluminium indium arsenide (AlInAs) 249, 251, 372, 373, 376, 444
aluminium indium phosphide (AlInP) 292, 317
AM0 (air mass zero) illumination 479
AM1 (air mass 1) illumination 479, 480
amorphous semiconductor 311, 447, 448, 460, 464, 469, 475, 478
amorphous silicon (a-Si) 460, 461, 463
amorphous silicon:carbon (a-Si/C) 484
amorphous silicon:germanium (a-Si/Ge) 484
amorphous silicon:hydrogen (a-Si:H) 465, 466, 470, 476, 480, 486, 492, 493, 494, 495, 496
amorphous silicon solar cells 470, 483
amorphous silicon TFTs see “thin film transistor”
analogue circuit 102
analogue-digital conversion 95
Anderson, Philip 3, 463
Anderson transition 463
anode 130
antimony (Sb) 89
anti-reflection coating 478
Antypas, Gerald 345
Arrhenius plot 179
arsenic (As) 144
arsenic trichloride (AsCl3) 164
arsine (AsH3) 166
Arthur, John 167, 168, 217
Atalla, John 101
AT&T 47, 125, 341
atmospheric transmission 390, 398
Auger recombination 344, 348
avalanche breakdown 370
avalanche photodiode 367, 369, 370
Si 369
background limited detection 393, 394, 400, 407, 417, 427, 428, 429
background radiation 392
ballistic transport 218, 229, 233
band bending 35, 36, 77, 78, 84, 85, 177, 220
in polycrystalline semiconductors 401, 449, 450, 451
in photocathode materials 411, 419
band diagram 85, 86, 177, 181
heterostructures 219, 255, 260, 317, 358
photodetector 364
photoemission 411, 419
polycrystaline materials 449
ternary alloys 287, 291
band edge 33, 149, 272
band gap 8, 10, 181, 313, 368, 439, 461
Si 144, 149, 157, 462
GaAs 157
GaAsP 287
GaInAsP 346
GaN 309
Ge 157
InN 328
lead salts 401, 402, 437
table 16
band offset 240, 241, 249, 255
band structure 62, 63, 64, 180
GaAs 154
Si 65
band states 462
band theory 7, 32
bandwidth 95, 333, 355, 370, 373, 378, 379, 394
Bardeen, John 3, 32, 49, 51, 53, 75, 76, 80, 101
barrier 28, 36, 75–79, 224
inter-grain 401, 451–459
tunnelling 214, 217, 235
base 53, 72, 85, 86, 88
transit time 87
Becquerel, Henri 20
Bell, Alexander Graham 334
Bell Laboratories 23, 47, 49, 52, 75, 88, 100, 127, 128, 141, 144, 163, 165, 168, 192, 217, 219, 220, 227, 228, 243, 248, 259, 273, 295, 297, 301, 339, 347, 353, 364, 431, 442, 463, 471, 498
binding energy 14
bipolar transistor 84, 103, 105, 138, 195
insulated gate 134, 138
bit 95, 316
bit rate 371, 373, 379
blackbody radiation 387, 388, 389
Blood, Peter 1, 28, 317
Bohr, Neils 385
Bohr radius 14, 140, 156, 214, 300
bolometer 395
boron (B) 15, 41, 57, 112, 135
boric oxide (B2O3) 160, 161
Bown, Ralph 53
Bragg mirror
laser 352–353, 380–382, 440, 445
optical modulator 273
photodiode 371
VCSEL 269–271
Brattain, Walter 3, 49, 51, 52, 53, 56, 80, 101, 395
Braun, Carl Ferdinand 20, 22, 41
breakdown voltage 136
Bridgman growth method 158, 159, 160, 403, 418, 426
Brillouin zone 309
British Telecom (BT) 125, 341, 354
de Broglie wavelength 117, 216, 230
bronze 3, 5
Brown University 248, 321
buffer layer 310, 312
built-in voltage 82
cadmium 413
cadmium selenide (CdSe) 457, 480, 492, 493
cadmium sulphide (CdS) 151, 286, 301, 306, 307, 360, 457, 458, 476, 480, 485, 486, 492
cadmium telluride (CdTe) 414, 476, 485, 486
Cambridge University 230
Canham, L T 498, 500
capacitance 114, 236, 369, 372
gate 103, 104, 106, 251
junction 83, 98, 108, 370
Schottky barrier 177
capacitance-voltage (profiling) 172, 174, 201
capacitor 82, 83, 250, 368
liquid crystal 490, 491
Capasso, Federico 442, 444, 445
Carlson, Dave 483
carrier confinement see “laser-double heterostructure”

-503-

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The Story of Semiconductors
Table of contents

Table of contents

  • Title Page iii
  • Preface v
  • Contents xi
  • Chapter 1 - Perspectives 1
  • Chapter 2 - The Cat's Whiskers 19
  • Chapter 3 - Minority Rule 47
  • Chapter 4 - Silicon, Silicon, and Yet More Silicon 93
  • Chapter 5 - The Compound Challenge 149
  • Chapter 6 - Low Dimensional Structures 213
  • Chapter 7 - Let There Be Light 277
  • Chapter 8 - Communicating with Light 331
  • Chapter 9 - Semiconductors in the Infrared 385
  • Chapter 10 - Polycrystalline and Amorphous Semiconductors 447
  • Index 503
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